Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes

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dc.authoridTecimer, Huseyin/0000-0002-8211-8736
dc.authoridUslu Tecimer, Habibe/0000-0002-0094-7427
dc.contributor.authorTecimer, Habibe Uslu
dc.contributor.authorAlper, M. A.
dc.contributor.authorTecimer, H.
dc.contributor.authorTan, S. O.
dc.contributor.authorAltindal, S.
dc.date.accessioned2024-09-29T15:51:02Z
dc.date.available2024-09-29T15:51:02Z
dc.date.issued2018
dc.departmentKarabük Üniversitesien_US
dc.description.abstractSchottky barrier diodes (SBDs) have been fabricated with pure and zinc (Zn) doped organic interfacial layer of polyvinyl alcohol (PVA) to form Au/PVA/n-GaAs and Au/PVA(Zn-doped)/n-GaAs structures. The electrical characterization of these SBDs have also been made using their current-voltage (I-V) characteristics data on both forward and reverse biases at room temperature. The main electrical parameters, such as ideality factor (n), barrier height (I broken vertical bar (Bo)), series resistance (R (s)) and the voltage dependence resistance (R (i)) have also been extracted from the I-V data to compare the Zn-doped and undoped polymer interfacial layer SBDs. The rectifying ratio values of Au/PVA/n-GaAs and Au/PVA(Zn-doped)/n-GaAs SBDs have been obtained as 10(5) and 10(7), respectively, at (+/- 2 V). Consequently, the comparison of the polymer interfacial layer SBDs indicates that the Zn-doped SBDs have given better results than the undoped SBDs when considering the main electrical parameters at room temperature.en_US
dc.identifier.doi10.1007/s00289-018-2274-5
dc.identifier.endpage4271en_US
dc.identifier.issn0170-0839
dc.identifier.issn1436-2449
dc.identifier.issue9en_US
dc.identifier.scopus2-s2.0-85040324675en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage4257en_US
dc.identifier.urihttps://doi.org/10.1007/s00289-018-2274-5
dc.identifier.urihttps://hdl.handle.net/20.500.14619/3852
dc.identifier.volume75en_US
dc.identifier.wosWOS:000441358200027en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofPolymer Bulletinen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectNanocompositeen_US
dc.subjectSchottky diodeen_US
dc.subjectPolymeren_US
dc.subjectInterfacial Layeren_US
dc.subjectPVAen_US
dc.titleIntegration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodesen_US
dc.typeArticleen_US

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