Evaluation of Electric and Dielectric Properties of Metal-Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer

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dc.authoridMaril, Elif/0000-0002-6278-3843
dc.contributor.authorMaril, Elif
dc.contributor.authorTan, Serhat Orkun
dc.contributor.authorAltindal, Semsettin
dc.contributor.authorUslu, Ibrahim
dc.date.accessioned2024-09-29T16:04:30Z
dc.date.available2024-09-29T16:04:30Z
dc.date.issued2018
dc.departmentKarabük Üniversitesien_US
dc.description.abstractElectrical and dielectric properties of Au/n-Si metal-semiconductor structures with high dielectric have been examined by capacitance/conductance-voltage (C/G-V) measurements in the frequency range of 5-500 kHz at room temperature. Voltage-dependent profiles of interface states (N-ss) and resistance (R-i) were extracted from the C and G data using the low-high-frequency capacitance and Nicollian-Brews methods, respectively. The real and imaginary components of the complex dielectric constant (epsilon', epsilon ''), electric modulus (M' and M ''), and ac conductivity (sigma(ac)) were calculated from the C and G data. All parameters have a strong relation with frequency and voltage, especially at low frequencies due to Maxwell-Wagner relaxation and N-ss. The observed peaks in the N-ss-V and R-i-V plots can be ascribed by the special distribution of N-ss at M/S interface. These results confirmed that [2% graphene cobalt-doped (Ca3CO4Ga0.001Ox] interlayer has high-dielectric constant and can be used an interlayer instead of the traditional SiO2 at M/S interface to increase their capacitance or more charges/energy storage and reduce both the values of N-ss and series resistance (R-s). The values of a are almost constant at lower-intermediate frequencies, but they start to increase at high frequencies that are corresponding to the dc and ac conductivity, respectively.en_US
dc.description.sponsorshipGazi University Scientific Research Project [GU-BAP.05/2018-10]en_US
dc.description.sponsorshipThis work was supported by the Gazi University Scientific Research Project under Grant GU-BAP.05/2018-10.en_US
dc.identifier.doi10.1109/TED.2018.2859907
dc.identifier.endpage3908en_US
dc.identifier.issn0018-9383
dc.identifier.issn1557-9646
dc.identifier.issue9en_US
dc.identifier.scopus2-s2.0-85051383396en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage3901en_US
dc.identifier.urihttps://doi.org/10.1109/TED.2018.2859907
dc.identifier.urihttps://hdl.handle.net/20.500.14619/6169
dc.identifier.volume65en_US
dc.identifier.wosWOS:000442357000044en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIeee-Inst Electrical Electronics Engineers Incen_US
dc.relation.ispartofIeee Transactions On Electron Devicesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDielectric propertiesen_US
dc.subjectelectrical propertiesen_US
dc.subjectgrapheneen_US
dc.subjectnanostructuresen_US
dc.subjectpolymeren_US
dc.titleEvaluation of Electric and Dielectric Properties of Metal-Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) Interlayeren_US
dc.typeArticleen_US

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