Comparison of Chromium- and Aluminum-Gated Nanocrystalline Silicon TFTs
Küçük Resim Yok
Tarih
2021
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Ieee-Inst Electrical Electronics Engineers Inc
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Three sets of bottom-gate (BG) nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) with amorphous silicon nitride (a-SiNx:H) as the gate dielectric were produced under various nc-Si:H plasma deposition conditions. Chromium (Cr) and aluminum (Al) were used as the gate electrodes in each TFT set. The effects of the gate electrode on the nc-Si:H TFT performance, particularly on its electrical stability, were studied. For each TFT set, Al-gated TFTs resulted in the higher mobility, lower subthreshold slope, and better stability compared to the Cr-gated TFTs. The impact of the Cr- or Al-gate underlayer on the surface and bulk properties of a-SiNx:H and nc-Si:H films was analyzed in detail considering back channel etching (BCE) characteristics, electrical, scanning electron microscope (SEM), Raman, grazing angle X-ray diffraction (GAXRD), and Fourier transform infrared-attenuated total reflection (FTIR-ATR) measurements. Structural differences were recognized in a-SiNx:H and nc-Si:H films grown in the BG TFT sequence depending on the type of the gate electrode. Based on these findings, possible reasons were proposed to explain the superiority of the Al over Cr as the gate electrode for nc-Si:H TFTs.
Açıklama
Anahtar Kelimeler
Logic gates, Thin film transistors, Electrodes, Substrates, Scanning electron microscopy, Stress, Laser stability, Fourier transform infrared-attenuated total reflection (FTIR-ATR), gate electrode, chromium and aluminum, grazing angle X-ray diffraction (GAXRD), nanocrystalline silicon TFT, Raman, SEM, silicon nitride, TFT electrical stability
Kaynak
Ieee Transactions On Electron Devices
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
68
Sayı
12
