Comparison of Chromium- and Aluminum-Gated Nanocrystalline Silicon TFTs

Küçük Resim Yok

Tarih

2021

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Ieee-Inst Electrical Electronics Engineers Inc

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

Three sets of bottom-gate (BG) nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) with amorphous silicon nitride (a-SiNx:H) as the gate dielectric were produced under various nc-Si:H plasma deposition conditions. Chromium (Cr) and aluminum (Al) were used as the gate electrodes in each TFT set. The effects of the gate electrode on the nc-Si:H TFT performance, particularly on its electrical stability, were studied. For each TFT set, Al-gated TFTs resulted in the higher mobility, lower subthreshold slope, and better stability compared to the Cr-gated TFTs. The impact of the Cr- or Al-gate underlayer on the surface and bulk properties of a-SiNx:H and nc-Si:H films was analyzed in detail considering back channel etching (BCE) characteristics, electrical, scanning electron microscope (SEM), Raman, grazing angle X-ray diffraction (GAXRD), and Fourier transform infrared-attenuated total reflection (FTIR-ATR) measurements. Structural differences were recognized in a-SiNx:H and nc-Si:H films grown in the BG TFT sequence depending on the type of the gate electrode. Based on these findings, possible reasons were proposed to explain the superiority of the Al over Cr as the gate electrode for nc-Si:H TFTs.

Açıklama

Anahtar Kelimeler

Logic gates, Thin film transistors, Electrodes, Substrates, Scanning electron microscopy, Stress, Laser stability, Fourier transform infrared-attenuated total reflection (FTIR-ATR), gate electrode, chromium and aluminum, grazing angle X-ray diffraction (GAXRD), nanocrystalline silicon TFT, Raman, SEM, silicon nitride, TFT electrical stability

Kaynak

Ieee Transactions On Electron Devices

WoS Q Değeri

Q2

Scopus Q Değeri

Q2

Cilt

68

Sayı

12

Künye