Comparison of Chromium- and Aluminum-Gated Nanocrystalline Silicon TFTs

Basit Öğe Kaydı
dc.authoridAnutgan, Tamila/0000-0002-0287-265X
dc.contributor.authorAnutgan, Tamila
dc.contributor.authorAnutgan, Mustafa
dc.date.accessioned2024-09-29T16:04:30Z
dc.date.available2024-09-29T16:04:30Z
dc.date.issued2021
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThree sets of bottom-gate (BG) nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) with amorphous silicon nitride (a-SiNx:H) as the gate dielectric were produced under various nc-Si:H plasma deposition conditions. Chromium (Cr) and aluminum (Al) were used as the gate electrodes in each TFT set. The effects of the gate electrode on the nc-Si:H TFT performance, particularly on its electrical stability, were studied. For each TFT set, Al-gated TFTs resulted in the higher mobility, lower subthreshold slope, and better stability compared to the Cr-gated TFTs. The impact of the Cr- or Al-gate underlayer on the surface and bulk properties of a-SiNx:H and nc-Si:H films was analyzed in detail considering back channel etching (BCE) characteristics, electrical, scanning electron microscope (SEM), Raman, grazing angle X-ray diffraction (GAXRD), and Fourier transform infrared-attenuated total reflection (FTIR-ATR) measurements. Structural differences were recognized in a-SiNx:H and nc-Si:H films grown in the BG TFT sequence depending on the type of the gate electrode. Based on these findings, possible reasons were proposed to explain the superiority of the Al over Cr as the gate electrode for nc-Si:H TFTs.en_US
dc.description.sponsorshipKarabuk University (KBU) Coordinatorship of Scientific Research Projects [KBUBAP-21-DS-067]en_US
dc.description.sponsorshipThis work was supported in part by Karabuk University (KBU) Coordinatorship of Scientific Research Projects under Project KBUBAP-21-DS-067.en_US
dc.identifier.doi10.1109/TED.2021.3119540
dc.identifier.endpage6189en_US
dc.identifier.issn0018-9383
dc.identifier.issn1557-9646
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-85118533170en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage6182en_US
dc.identifier.urihttps://doi.org/10.1109/TED.2021.3119540
dc.identifier.urihttps://hdl.handle.net/20.500.14619/6171
dc.identifier.volume68en_US
dc.identifier.wosWOS:000724501000039en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIeee-Inst Electrical Electronics Engineers Incen_US
dc.relation.ispartofIeee Transactions On Electron Devicesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectLogic gatesen_US
dc.subjectThin film transistorsen_US
dc.subjectElectrodesen_US
dc.subjectSubstratesen_US
dc.subjectScanning electron microscopyen_US
dc.subjectStressen_US
dc.subjectLaser stabilityen_US
dc.subjectFourier transform infrared-attenuated total reflection (FTIR-ATR)en_US
dc.subjectgate electrodeen_US
dc.subjectchromium and aluminumen_US
dc.subjectgrazing angle X-ray diffraction (GAXRD)en_US
dc.subjectnanocrystalline silicon TFTen_US
dc.subjectRamanen_US
dc.subjectSEMen_US
dc.subjectsilicon nitrideen_US
dc.subjectTFT electrical stabilityen_US
dc.titleComparison of Chromium- and Aluminum-Gated Nanocrystalline Silicon TFTsen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu