Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure
Küçük Resim Yok
Tarih
2019
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
cadmium-zincoxide (CdZnO) interlayered metal-semiconductor structure was examined by capacitance and conductance versus voltage data in dark and under 250W illumination at 100kHz, 500kHz and 1MHz frequencies, respectively. The effectuality of the frequency, applied voltage, illumination, and series resistance on the electrical parameters was discussed in detail. The increase in the frequency led to the decrement in capacitance and conductance and the increment in the illumination generally led to the increment in capacitance and conductance. An abnormal behavior was detected in the accumulation region of the C-V plots at 500kHz and 1MHz due to the inductive phenomenon of device. The effect of illumination intensity reduces the R-i values in the inversion region while enhances them in the depletion and accumulation region for 1MHz. Additionally, the series resistance values decrease with increasing frequency due to the specific dispersion of localized interface states. As a consequence of the experimental results, a remarkable interaction was realized between the electrical parameters and the illumination, frequency and applied biases.
Açıklama
Anahtar Kelimeler
Dielectric-Properties, Negative Capacitance, Bias Voltage, Semiconductor, Conductivity, Diodes, Layer
Kaynak
Journal of Materials Science-Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
30
Sayı
12
