Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure

Basit Öğe Kaydı
dc.authoridTascioglu, Ilke/0000-0001-9563-4396
dc.contributor.authorTascioglu, Ilke
dc.contributor.authorTan, S. O.
dc.contributor.authorAltindal, S.
dc.date.accessioned2024-09-29T15:51:16Z
dc.date.available2024-09-29T15:51:16Z
dc.date.issued2019
dc.departmentKarabük Üniversitesien_US
dc.description.abstractcadmium-zincoxide (CdZnO) interlayered metal-semiconductor structure was examined by capacitance and conductance versus voltage data in dark and under 250W illumination at 100kHz, 500kHz and 1MHz frequencies, respectively. The effectuality of the frequency, applied voltage, illumination, and series resistance on the electrical parameters was discussed in detail. The increase in the frequency led to the decrement in capacitance and conductance and the increment in the illumination generally led to the increment in capacitance and conductance. An abnormal behavior was detected in the accumulation region of the C-V plots at 500kHz and 1MHz due to the inductive phenomenon of device. The effect of illumination intensity reduces the R-i values in the inversion region while enhances them in the depletion and accumulation region for 1MHz. Additionally, the series resistance values decrease with increasing frequency due to the specific dispersion of localized interface states. As a consequence of the experimental results, a remarkable interaction was realized between the electrical parameters and the illumination, frequency and applied biases.en_US
dc.identifier.doi10.1007/s10854-019-01509-4
dc.identifier.endpage11541en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-85065973481en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage11536en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-019-01509-4
dc.identifier.urihttps://hdl.handle.net/20.500.14619/3981
dc.identifier.volume30en_US
dc.identifier.wosWOS:000472079200063en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDielectric-Propertiesen_US
dc.subjectNegative Capacitanceen_US
dc.subjectBias Voltageen_US
dc.subjectSemiconductoren_US
dc.subjectConductivityen_US
dc.subjectDiodesen_US
dc.subjectLayeren_US
dc.titleFrequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structureen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu