On the frequency-voltage dependent electrical and dielectric profiles of the Al/(Zn-PVA)/p-Si structures

dc.authoridTecimer, Huseyin/0000-0002-8211-8736
dc.contributor.authorTecimer, Huseyin
dc.date.accessioned2024-09-29T15:51:16Z
dc.date.available2024-09-29T15:51:16Z
dc.date.issued2018
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe frequency effect on the dielectric features of Zn doped polymer interlayered metal-semiconductor (MS) structure has been investigated by admittance measuring methods. As a function of frequency and voltage, the parameters such as dielectric constant (epsilon), dielectric loss (epsilon), dielectric loss tangent (tan), and ac electrical conductivity (sigma(ac)) have been calculated. The values of epsilon, epsilon and tan were decreased with frequency increment for each applied bias. The decrement at epsilon and epsilon by frequency increase indicated that the interfacial dipoles have not enough time to orient themselves in the alternate field direction. While the M value increase with frequency and reach a maximum, M displays a peak where its position shifts to higher frequency with increasing applied bias. The ln(sigma(ac)) vs ln() plot of the structure at 6V has two linear regions with different slopes. Such behavior of ln(sigma(ac)) vs ln() plot reveals that there are two distinct conduction mechanisms in the Al/(0.07Zn-doped PVA)/p-Si MPS type SBDs at room temperature.en_US
dc.identifier.doi10.1007/s10854-018-0146-2
dc.identifier.endpage20145en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue23en_US
dc.identifier.scopus2-s2.0-85056113607en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage20141en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-018-0146-2
dc.identifier.urihttps://hdl.handle.net/20.500.14619/3980
dc.identifier.volume29en_US
dc.identifier.wosWOS:000448831000061en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectConductivityen_US
dc.subjectDiodesen_US
dc.titleOn the frequency-voltage dependent electrical and dielectric profiles of the Al/(Zn-PVA)/p-Si structuresen_US
dc.typeArticleen_US

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