On the donor states in double InxGa1-xN/InyGa1-yN/GaN staggered quantum wells
Küçük Resim Yok
Tarih
2013
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Iop Publishing Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
We have calculated the binding energies of the donor states, 1s and 2p +/-, with respect to the lowest sub-band energy in a double quantum well composed of wurtzite InGaN staggered quantum wells with GaN barriers. All the energies and the wavefunctions were calculated by applying the variational methods. We have found that the binding energies of donors placed in the right quantum well are larger and independent of the middle barrier width of up to 40 angstrom. This is because of the strong built-in electric field which brings more confinement to the donor wavefunctions in the right staggered quantum well. The binding energies are found to be strong functions of the donor position in the double quantum well system which is the consequence of the large asymmetry introduced by the built-in electric field.
Açıklama
Anahtar Kelimeler
Hydrogenic Impurity States, Light-Emitting-Diodes, Electric-Field
Kaynak
Semiconductor Science and Technology
WoS Q Değeri
Q1
Scopus Q Değeri
Q2
Cilt
28
Sayı
11
