On the donor states in double InxGa1-xN/InyGa1-yN/GaN staggered quantum wells

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dc.contributor.authorYildirim, Hasan
dc.contributor.authorAslan, Bulent
dc.date.accessioned2024-09-29T16:03:02Z
dc.date.available2024-09-29T16:03:02Z
dc.date.issued2013
dc.departmentKarabük Üniversitesien_US
dc.description.abstractWe have calculated the binding energies of the donor states, 1s and 2p +/-, with respect to the lowest sub-band energy in a double quantum well composed of wurtzite InGaN staggered quantum wells with GaN barriers. All the energies and the wavefunctions were calculated by applying the variational methods. We have found that the binding energies of donors placed in the right quantum well are larger and independent of the middle barrier width of up to 40 angstrom. This is because of the strong built-in electric field which brings more confinement to the donor wavefunctions in the right staggered quantum well. The binding energies are found to be strong functions of the donor position in the double quantum well system which is the consequence of the large asymmetry introduced by the built-in electric field.en_US
dc.description.sponsorshipAnadolu University [BAP-1106F121]en_US
dc.description.sponsorshipThis work was supported in part by Anadolu University under the project BAP-1106F121.en_US
dc.identifier.doi10.1088/0268-1242/28/11/115006
dc.identifier.issn0268-1242
dc.identifier.issn1361-6641
dc.identifier.issue11en_US
dc.identifier.scopus2-s2.0-84887050683en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1088/0268-1242/28/11/115006
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5855
dc.identifier.volume28en_US
dc.identifier.wosWOS:000326378700006en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofSemiconductor Science and Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHydrogenic Impurity Statesen_US
dc.subjectLight-Emitting-Diodesen_US
dc.subjectElectric-Fielden_US
dc.titleOn the donor states in double InxGa1-xN/InyGa1-yN/GaN staggered quantum wellsen_US
dc.typeArticleen_US

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