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The analysis of the researches on metal- semiconductor structures with and without interfacial layer in turkey
(2019) Tan, Serhat Orkun
Today, there are fairly large number of theoretical and experimental studies on metalsemiconductorstructures or Schottky structures which formed by a tight contact of themetal and semiconductor. Having different physical, chemical and electrical properties manymaterials have been used to produce metal-semiconductor structures with and without interfacelayer from past to present. The distinctive properties which are not exist at otherdiodes, open for improvement and widespread use of electronic technology has led scientiststo make studies on the metal-semiconductor structures. Considering the scientific studies onmetal-semiconductor structures, the examination of the metal-semiconductor and the metalsemiconductorwith interfacial layer structures, the observation of its progress over time andthe statistical analysis of academic studies in this area in Turkey have been made in this study.The analysis of the academic studies which are scanned in Web of Science database and madein Turkey were performed with data mining by using automated data collection methodsand SQL Server Management Studio program. The statistical analysis results show that theacademic studies made for every type of MS structure in Turkey increase for almost everyyear. Considering the academic studies conducted in 2018, the studies on MS and MPS havereached the highest level in all years with 118 and 13 publications. The last five years rate ofthe number of publications form nearly %45 of all-time publications and the academic studiesmade for every type of MS structure in Turkey increase for almost every year.
Comparative Investigation on the Effects of Organic and Inorganic Interlayers in Au/n-GaAs Schottky Diodes
(Ieee-Inst Electrical Electronics Engineers Inc, 2017) Tan, Serhat Orkun; Tecimer, Huseyin; Cicek, Osman
There have been many attempts on Schottky barrier diodes (SBDs) to improve the quality of metal-semiconductor (MS) structure and control permanently the barrier height (BH) by utilizing an organic or inorganic interfacial layer instead of widely used SiO2. The organic polymer or inorganic insulator interfacial layer insertion to the M/S interface converts the structure into the metal-polymer-semiconductor (MPS) or metal-insulator-semiconductor (MIS). The reliability and performance of the MIS/MPS-type SBDs is drastically affected by the interface layer quality and also its thickness. In this paper, MS structure forms as Au/n-GaAs are consecutively used with an organic interfacial layer polyvinyl alcohol and inorganic interfacial layer zinc oxide to compare their effects on the electrical characteristics of SBDsunder distinct illumination levels. Consequently, the current-voltage characteristics provide us to reveal and compare the improvement and reliabilityof the MPS and MIS-type SBDs by also considering significant electrical parameters, such as ideality factor, apparent BH, and series resistance.
Comparative study of the effect of different interlayer thicknesses on frequency dependent electric modulus and conductivity in Au/n-Si structures
(Elsevier Science Sa, 2021) Arslan, Bilal; Tan, Serhat Orkun; Orak, Ikram; Tecimer, Habibe Uslu
Frequency dependent capacitance (C) and conductance (G/omega) data for Au/n-Si structures fabricated at room temperature without interlayers and with 5 nm and 10 nm aluminium-oxide (Al2O3) interlayer thicknesses are investigated. The Al2O3 interlayers were deposited by atomic layer deposition. Data on the complex electric modulus (M*) and alternating current electrical conductivity (sigma(ac)) values are acquired for the three structures in the 3 kHz-3 MHz frequency range between (-3 V) - (+5 V) bias interval and compared. It was observed that the C and G/omega values decreased with the increase in frequency and interlayer thickness and that the frequency increases as a result of polarization which also increases M*, especially in 5 nm and 10 nm interlayered structures. Frequency and interlayer thickness increment have a positive impact by increasing sigma(ac), while conductivity has been shown to be highly sensitive to the presence of an interlayer and to its thickness.
Comparison of dielectric characteristics for metal-semiconductor structures fabricated with different interlayers thicknesses
(Springer, 2021) Arslan, Bilal; Tan, Serhat Orkun; Tecimer, Huseyin; Altindal, Semsettin
The dielectric properties of MS structures without interlayer and with Al2O3 interlayer have been investigated in a wide frequency range under forward and reverse biases. In this context, parameters such as loss tangent (tan delta), dielectric constant (epsilon '), dielectric loss (epsilon '') were calculated from the capacitance and conductivity data. The observed changes in dielectric parameters have been attributed to the coupling mechanisms between charges placed at the interface states, surface and bipolar polarization, and traps. The experimental results clearly indicate that the values of epsilon ', epsilon '' and tan delta vary significantly with frequency and voltage. That is, the thickness of the interlayer changes considerably the dielectric properties of the structure. As a result, it has been revealed that the desired device properties can be achieved by varying the thickness of the interlayers.
Comparison of Graphene and Zinc Dopant Materials for Organic Polymer Interfacial Layer Between Metal Semiconductor Structure
(Ieee-Inst Electrical Electronics Engineers Inc, 2017) Tan, Serhat Orkun
Au/n-GaAs structures with polyvinyl alcohol (PVA) organic interface layer were produced by doping graphene (Gr) and zinc (Zn) separately to the interface layer. The electrical characterizations of both structures which have Schottky barrier diodes (SBDs) property were compared both at the forward and reverse biases at room temperature using the current-voltage (I-V) data. For this purpose, the main electrical parameters such as saturation current (I-o), barrier height (Phi(Bo)), ideality factor (n), series (R-s) resistance, and shunt (R-sh) resistance are obtained for Gr doped and Zn doped Au/PVA/n-GaAs and compared by utilizing thermionic emission theory, Cheung's method and modified Norde's methods. Investigation of Rs and Rsh values at (+/- 2 V) for Gr-doped and Zn-doped structures ensured to obtain the rectifiying ratio values and give an idea to find out the better quality of these structures. Thus, the results for the comparison of polymer interlayers with different dopants show that doping with both Zn and Gr differently improved the quality of SBDs when considering the main electrical parameters.
Determination of Surface States Energy Density Distributions and Relaxation Times for a Metal-Polymer-Semiconductor Structure
(Ieee-Inst Electrical Electronics Engineers Inc, 2019) Alptekin, Sebahaddin; Tan, Serhat Orkun; Altindal, Semsettin
The capacity/conductivity-voltage (C/G-V) data of the PVP interlayered metal-semiconductor structure were examined at +/- 4V biases and 1-500 kHz frequency interval at room temperature. The surface states (N-ss) in the insulation layer and the metal-semiconductor interface are seen as the main causes of high capacitance and conductivity values at low frequencies. AC signals, which result in an increase in capacitance and conductivity values, are easily monitored by N-ss at low frequencies. The graph extracted against the conductivity and frequency logarithm (G(p)/omega-log(f)) indicates a peak appearance as a result of the N-ss effect. In the energy range of (E-c -0.423) - (E-c-0.604), surface states (N-ss) and relaxation times (tau) values alter from 8.71 x 10(11) to 5.84 x 10(11) eV(-1) cm(-2) and 6.54x10(-6) s to 1.10x10(-4) s, respectively.
Dielectric properties, electric modulus and conductivity profiles of Al/Al2O3/p-Si type MOS capacitor in large frequency and bias interval
(Elsevier - Division Reed Elsevier India Pvt Ltd, 2022) Tan, Serhat Orkun; Cicek, Osman; Turk, Cagri Gokhan; Altindal, Semsettin
The letter reports that the impedance spectroscopy method has been performed to acquire impeccable results on the ac electric conductivity (sigma(ac)) dielectric (epsilon' and epsilon '') and electric modulus (M' and M '') components of the Al/Al2O3/p-Si type MOS capacitor. The relevant parameters are defined with C-V-f and G/omega-V-f data between 1 kHz and 5 MHz and +/- 3 V at room temperature. Both parts of dielectric constants are decreasing at high frequencies to prevent the interface dipoles from gaining enough time to return to the alternative area. Depending on the restructuring and reorganization of surface states (N-ss) in the alternative field, tan delta decreases at higher frequencies. The M' values reach maximum by frequency increment in the depletion region, while M '' values shift to the forward biases depending on a certain density distribution of N-ss. The sigma(ac) values increase with increasing frequency in the accumulation region depending on series resistance. Considering polarization processes, surface conditions (N-ss) and Al2O3 interlayer, frequency and biases are extremely effective and dependent on the dielectric specifications, electrical modulus and conductivity. (C) 2021 Karabuk University. Publishing services by Elsevier B.V.
Effectuality of Barrier Height Inhomogeneity on the Current-Voltage-Temperature Characteristics of Metal Semiconductor Structures with CdZnO Interlayer
(Springer, 2018) Tascioglu, Ilke; Tan, Serhat Orkun; Yakuphanoglu, Fahrettin; Altindal, Semsettin
Current-conduction/transport mechanisms (CCMs or CTMs) through barrier and barrier height (BH) formation in the Al/(CdZnO)/p-Si/Al diodes, which were prepared by the sol-gel method, were examined in the range of 110-380 K. The decrease of zero-bias BH (Phi(Bo)) and increase of ideality factor (n) with decreasing temperature were observed. The classic Richardson plot indicated two distinct linear regions that correspond to low and high temperature range (LTR and HTR), respectively. Contrary to this, the acquired Richardson constant value (A*) was much lower than its theoretical value (32 A cm(-2) K-2). Such abnormal behavior of the Phi(Bo), n and A* was attributed to the evidence of the barrier inhomogeneities, especially at low temperature. Therefore, the Phi(Bo-)n, Phi(Bo) and (n(-1) - n) versus q/2kT plots were sketched to acquire significant clues for the Gaussian distribution (GD) of the BHs at rectifier contact area with the mean BH ((Phi) over bar (Bo)) and standard deviation (sigma(so)), which also have two linear parts with distinct slopes. (Phi) over bar and sigma(so) were calculated from the slope and intercept of Phi(Bo) versus q/2kT plot as 0.802 eV and 0.066 V for LTR, 1.043 eV and 0.106 V for HTR, respectively. The (Phi) over bar (Bo) and A* were acquired by utilizing the sigma(so) values and using the Richardson plot as 0.626 eV and 14.26 A cm(-2) K-2 for LTR and 1.021 eV and 32.53 A cm(-2) K-2 for HTR, respectively. Thus, the I-V-T characteristics of the Al/(CdZnO)/p-Si/Al diodes at forward biases were successfully elucidated by the double-GD of BHs with mean BHs of 0.626 eV and 1.021 eV, respectively.
Effectuality of the frequency levels on the c&g/?–v data of the polymer interlayered metal-semiconductor structure
(2022) Alsmael, Jaafar; Urgun, Nuray; Tan, Serhat Orkun; Tecımer, Habibe Uslu
Voltage and frequency dependent of capacitance and conductivity versus voltage (C&G/?–V) qualifications of Al/(ZnFe2O4-PVA)/p-Si structure was compared and examined at lower and higher frequencies as 10 kHz and 1 MHz, respectively. The negative capacitance (NC) is a phenomenon that occurs at low frequencies and is primarily caused by minority carrier injection, series resistance (Rs), and surface states (Nss). Because of the specific density distribution and relaxation times of Nss, NC acts different behavior at lower and higher frequency levels and loses its effectiveness with increasing frequency. Also, the fluctuations in C and G/? were ascribed to doping concentration, surface states loss charges, and interlayer thickness. Nss was acquired using the low-high frequency capacitance method (CLF-CHF), and the forward biased C?2 vs V graphs (at 10 kHz to 1 MHz) were used to determine the Fermi level (EF), barrier height (?B), and concentration of doped acceptor atoms (NA). Accordingly, it has been detected that C and G/? are highly dependence on biases and frequencies. Then again, the polarizations and surface states effect are barely perceptible at extremely higher frequency levels. Thus, polarization and Rs stand out as important parameters that should be taken into account when examining the basic parameters of electronic devices.
Evaluation of Electric and Dielectric Properties of Metal-Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer
(Ieee-Inst Electrical Electronics Engineers Inc, 2018) Maril, Elif; Tan, Serhat Orkun; Altindal, Semsettin; Uslu, Ibrahim
Electrical and dielectric properties of Au/n-Si metal-semiconductor structures with high dielectric have been examined by capacitance/conductance-voltage (C/G-V) measurements in the frequency range of 5-500 kHz at room temperature. Voltage-dependent profiles of interface states (N-ss) and resistance (R-i) were extracted from the C and G data using the low-high-frequency capacitance and Nicollian-Brews methods, respectively. The real and imaginary components of the complex dielectric constant (epsilon', epsilon ''), electric modulus (M' and M ''), and ac conductivity (sigma(ac)) were calculated from the C and G data. All parameters have a strong relation with frequency and voltage, especially at low frequencies due to Maxwell-Wagner relaxation and N-ss. The observed peaks in the N-ss-V and R-i-V plots can be ascribed by the special distribution of N-ss at M/S interface. These results confirmed that [2% graphene cobalt-doped (Ca3CO4Ga0.001Ox] interlayer has high-dielectric constant and can be used an interlayer instead of the traditional SiO2 at M/S interface to increase their capacitance or more charges/energy storage and reduce both the values of N-ss and series resistance (R-s). The values of a are almost constant at lower-intermediate frequencies, but they start to increase at high frequencies that are corresponding to the dc and ac conductivity, respectively.
Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage
(Elsevier, 2020) Turk, Cagri Gokhan; Tan, Serhat Orkun; Altindal, Semsettin; Inem, Burhanettin
In this study, Al/Al2O3/p-Si (MIS) type structures were fabricated and then the effects of Al2O3 interlayer on the electrical characteristics have been investigated at room temperature. For this purpose, capacitance/ conductance-voltage-frequency (C/G-V-f) measurements were performed in the wide range frequency (1kHz-5 MHz) and voltage (+/- 3 V) to get more reliable and accuracy results on the barrier height (BH) formation at Al/p-Si interface, conduction mechanisms, and main electrical parameters. Experimental results indicate that C and G/omega values are strong function of frequency and voltage particularly in the regions of accumulation and depletion. Calculating from the interception and slope of C-2-V plot, the doping acceptor atoms (N-A), BH and depletion layer width (W-D) were obtained for each frequency, respectively. Both BH and W-D values exponentially increase by frequency increment. Nicollian-Brews method were used to extract voltage dependence profiles of R-s and frequency from C and G data.
Frequency Response of Metal-Semiconductor Structures With Thin-Films Sapphire Interlayer by ALD Technique
(Ieee-Inst Electrical Electronics Engineers Inc, 2021) Tan, Serhat Orkun; Tascioglu, Ilke; Altindal, Semsettin
MIS-type Al/Al2O3/p-Si structures were fabricated to identify its admittance analysis through capacitance/conductance versus logarithmic frequency (C/G-V-f) data in the 1 kHz-5 MHz and +/- 3 V ranges at room temperature. Admittance measurements determine the surface states (N-ss) and these states occurred at M/S interlayer arise as a result of high capacitance and conductance values at low frequencies. This is also explained by adequacy of tracking ac signal by N-ss at lower frequencies. In consequence with N-ss presence, a peak turns up or becomes visible at the normalized parallel conductance versus logarithm of frequency [G(p)/omega - ln(f)] plot under various biases. In the energy range of (0.17 - E-v)-(0.67 - E-v), N-ss and their life/relaxation time (tau) values vary from 4.95 x 10(12) to 7.42 x 10(11) eV(-1).cm(-2) and from 7.85 x 10(-5) to 1.05 x 10(-6) s, respectively.
Frequency-Dependent Admittance Analysis of the Metal-Semiconductor Structure With an Interlayer of Zn-Doped Organic Polymer Nanocomposites
(Ieee-Inst Electrical Electronics Engineers Inc, 2018) Tecimer, Huseyin; Tan, Serhat Orkun; Altindal, Semsettin
The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) data for Al/(0.07Zn-doped polyvinyl alcohol)/p-Si structure have been performed (at +/- 6-V biases) in a frequency interval of 1-400 kHz at room temperature. Utilizing form conductance method, N-ss values were specified from admittance measurements. The reason of higher C and G values obtained at lower frequencies was ascribed to the surface states located atMS interface and insulator layer. The increment at capacitance and conductance was occurred in consequence of the ac signal that followed easily by the surface states at these lower frequencies. The surface states existence also generates peaks at conductance versus logarithm of frequency (Gp/omega-log(f)) plots under distinct voltage values. The acquired values of Nss and relaxation time (tau) are in the interval of 1.94 x 10(14)-1.67 x 10(14) eV(-1).cm(-2) and 2.81 x 10(-3)-1.30 x 10(-5) s, respectively.
Identification of Current Transport Mechanisms and Temperature Sensing Qualifications for Al/(ZnS-PVA)/p-Si Structures at Low and Moderate Temperatures
(Ieee-Inst Electrical Electronics Engineers Inc, 2022) Alsac, Aysun Arslan; Serin, Tulay; Tan, Serhat Orkun; Altindal, Semsettin
Current transport mechanisms (CTMs) and temperature sensing qualifications of Al/(ZnS-PVA)/p-Si structures are identified with the help of temperature-dependent forward bias current-voltage measurements. To determine the current transport mechanism, the electrical parameters of the structure such as saturation current (I-o), zero - bias barrier height (Phi(B0)), ideality factor (n) are determined from these characteristics measured in the temperature range of 60-320 K. The temperature dependencies of the calculated Phi(Bo) and n values indicate the existence of double Gaussian distribution (DGD) of barrier height (BH) at M/S interface. Using the modified Richardson plots, Phi(B0) and A* values have been found in the high temperature region (HT) (160-320 K) as 0.95 eV, 31.64 A.cm(-2)K(-2), respectively and in the low temperature region (60-140 K) as 0.3871 eV, 20.996 A.cm(-2)K(-2), respectively. The A* value in the HT region is very close to its theoretical value and hence the CTMs can be explained by the DGD of BH. Sensitivity (S) values are calculated for each voltage at forward biases from the temperature-dependent variation of the logarithm of the
Identification of the Frequency- and Voltage-Dependent Dielectric Characterization of Metal-Zn/PVA-Semiconductor Structures
(Ieee-Inst Electrical Electronics Engineers Inc, 2019) Tan, Serhat Orkun
Admittance measuring methods were applied for the dielectric characterization of a fabricated metal-semiconductor structure, which has a 150-nm polymer interlayer doped with Zn. The components of complex electric modulus and dielectric constant, loss tangent, and the ac electric conductivity parameters of this structure were calculated at room temperature. Distinct frequencies and applied biases lead to extreme changes in all acquired parameters. This alteration was seen as an increment in dielectric constant and loss tangent in view of surface states presence and dipole polarizations. The frequency increment also leads to an increase in electric modulus related with the dielectric relaxation of the polarizations and dipoles. In addition to these results, comparing with a 50-nm interlayered structure, the increment in the thickness of the interlayer increases the dielectric constant and electric modulus and reveals capacitor properties of the structure.
The Impact of Dopant on the Dielectric Properties of Metal-Semiconductor With ZnFe2O4 Doped Organic Polymer Nanocomposites Interlayer
(Ieee-Inst Electrical Electronics Engineers Inc, 2022) Alsmael, Jaafar Abdulkareem Mustafa; Tan, Serhat Orkun; Tecimer, Habibe Uslu; Altindal, Semsettin; Kalandaragh, Yashar Azizian
In this research, the dielectric characteristics of fabricated Al/(ZnFe2O4-PVA)/p-Si structures have been investigated in wide range frequency and voltage. Thus, by deriving capacitance-conductance (C-G/omega) measurements the main parameters of the metal-polymer-semiconductor (MPS) structure such as complex dielectric constants (epsilon ' and epsilon ''), loss tangent (tan delta), complex electric modulus (M ' and M '') and ac electrical conductivity (sigma(ac)), were acquired at frequency and voltage ranges of 1 kHz-1 MHz and (+/- 5V). As a result of the experiment, it was observed that the presence of negative capacitance (NC) at low frequencies differently affects the dielectric properties of the structure. Although the NC effect disappeared at high frequencies by the reduction of the effect of many parameters such as series resistance (R-ss) and interface states (N-ss) with frequency increment, the dielectric properties of the structure varied especially in the reverse bias region. Ultimately, it has been observed that the dielectric properties of the structure are highly dependent on frequency, voltage, N-ss, and polarization.
Impedance response and phase angle determination of metal-semiconductor structure with n-doped diamond like carbon interlayer
(2024) Urgun, Nuray; Vahıd, Aylar Feızollahı; Alsmael, Jaafar Abdulkareem Mustafa; Avar, Barış; Tan, Serhat Orkun
With their superior properties over p-n barriers, Schottky Barrier Diodes have a wide usage area, especially as a test tool to produce better-performance devices. The main performance parameter of these devices is measured by their conduction, which can develop with an interlayer addition through the sandwich design. Regarding the DLC, which also has outstanding specifications under thermal, chemical, and physical conditions, is a good candidate for interlayer tailoring, specifically when used with doping atoms. Thus, this study investigates the impedance response of the fabricated device with an N-doped DLC interlayer by employing the electrochemical technique as a combination of electrolysis, RF magnetron sputtering, and thermal evaporation. The measurements were conducted for broad scales of voltage and frequency corresponding between (-3V) and (+4V) and 1kHz and 1MHz, respectively. According to the impedance analysis, complex impedance decreases by rising bias and frequency, from 1.8 M? to 2 k ? at 1MHZ due to the additional insulating layer. At the same time, the phase angle indicates the quality of the dielectric layer with an average of 81.36 ? for the sample logarithmic frequency values with an almost constant-like trend in the inversion stage. In comparison, it reduces to an average of 30.25 ? after the depletion stage by showing the rising conductivity. Moreover, it has some unexpected rising values at the strong accumulation stage, possibly due to the deposited thin film's unique structure. The supported results by phase angle changes, showing frequency-adjustable working conditions, may offer that selective electrical conduction can be tuned.
An informetric view to the negative capacitance phenomenon at interlayered metal-semiconductor structures and distinct electronic devices
(2023) Urgun, Nuray; Alsmael, Jaafar Abdulkareem Mustafa; Tan, Serhat Orkun
Negative Capacitance (NC) phenomenon, which can be explained as the material exhibiting an inductive behavior, is often referred to as \"anomalous\" or \"abnormal\" in the literature. Especially in the forward bias/deposition region, the presence of surface states (Nss) and their relaxation times (?), series resistance (Rs), minority carrier injection, interface charge loss in occupied states under the Fermi energy level, parasitic inductance, or poor measuring equipment calibration problems can be counted among the causes of this phenomenon. Studies on NC behavior have shown that this behavior can be observed for different frequencies, temperatures, and related parameters at forward biases. However, the NC behavior, which appears as an unidentified peak in admittance spectroscopy data, is not yet fully understood. Ultimately, this study aims to compile and analyze the NC reported in selected scientific studies, investigate the source of this phenomenon, and observe statistics in a general view.
Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe2O4 Doped PVA
(Ieee-Inst Electrical Electronics Engineers Inc, 2024) Alsmael, Jaafar Abdulkareem Mustafa; Tan, Serhat Orkun
In this work, Al/p-Si structures with (ZnFe2O4- PVA) interfacial film, which is grown by the electrospinning-method, have been analyzed by using impedance measurements in the wide frequency interval (2 kHz-2 MHz) at both side of polarization (+/- 4 V). Some fundamental important electrical parameters such as intercept-voltage (V-o), the concentration of acceptor-atoms (N-A), depletion layer width (W-d), and barrier-height (phi(B)) were extracted from intercept and slope of the 1/C-2 vs V plot in the inversion region for each frequency. It has been observed that parameters such as the presence of surface states (N-SS), relaxation or lifetimes (tau), organic interlayer, dipoles or surface polarization in the inversion and depletion regions, especially at low and moderate frequencies, are obviously dependent on the frequency and applied biases. The voltage and frequency dependence profile of the series resistor (R-S), N-SS,N- and also tau were determined from the Nicollian-Brews method and Nicollian-Goetzberger conductance technique, respectively. The magnitude of N-SS and the values of tau were calculated from the maximum value of (G(P)/omega) related to the frequency for different voltage values. The negative capacitance (NC) at about zero biases and the source of the two incongruous peaks in the depletion and accumulation zones were also discussed. While the first peak in the depletion region was a result of N-SS, the second peak in the depletion region was caused by the effect of R-S.
Performance and cooling efficiency of thermoelectric modules on server central processing unit and Northbridge
(Pergamon-Elsevier Science Ltd, 2015) Tan, Serhat Orkun; Demirel, Huseyin
Computer systems are required to process data more rapidly than ever, due to recent software and internet technology developments. The server computers work continuously and provide services to many clients simultaneously, which results in greater heat production and high temperature that must be managed in order to avoid malfunction and failure of critical hardware. In this study, three cooling systems were used, comparatively to examine the temperature and performance of the CPU and motherboard. The temperature characteristics and performance of the CPU were tested with a heat sink, water cooling system, and thermoelectric cooler. According to the test results, the thermoelectric cooling system has better cooling performance than the other two systems under continuous operating conditions. Additionally, the performance rating of the CPU was the best with a thermoelectric cooler under varying workloads. (C) 2015 Elsevier Ltd. All rights reserved.

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