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A comparative study on electrical characteristics of Au/N-Si schottky diodes, with and without bi-doped PVA interfacial layer in dark and under illumination at room temperature
(2013) Alialy, S.; Tecimer, H.; Uslu, H.; Altindal, S.
In order to see the effect of Bi-doped PVA interfacial layer on electrical characteristics, both Au/n-Si (MS) and Au/Bidoped PVA/n-Si (MPS) type Schottky barrier diodes (SBDs) were fabricated, and their main electrical parameters were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements, in dark and under illumination at room temperature. Forward bias semi-logarithmic I-V plots of these SBDs show two distinct linear regions, with different slopes in the low and intermediate voltage region. Such behavior in I-V plots was explained by two parallel diodes model. Experimental results show that the ideality factor (n), barrier height (?b), series and shunt resistances (Rs and Rsh), and the density of interface states/traps (Nss) are strong functions of illumination level and applied bias voltage. The Rs values were determined from the I-V characteristics, by using both Ohm's law. The energy distribution profile of Nss was also obtained from the forward bias I-V characteristics, by taking into account voltage dependent barrier height (?e) and ideality factor (n). It was found that Bi-doped PVA layer lead to a considerable decrease in the leakage current, Rs and Nss and increase in Rsh and rectifier rate (RR=IF/IR). In conclusion, a thin Bi-doped PVA interfacial layer, considerably improved the diode performance, both in dark and under illumination. © 2013 Alialy S, et al.
Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures
(Elsevier, 2020) Baydilli, E. Evcin; Tan, S. O.; Tecimer, H. Uslu; Altindal, S.
The possible current-transport mechanisms (CTMs) of Au/(%7Gr-doped)PVA/n-GaAs structure was examined between 80 K and 360 K. The forward bias semi-logarithmic I-V curves have two different linear regions; as 0.30 V and 0.56 V (Region I), and 0.72 V and 0.92 V (Region II). Contrary to classical thermionic emission (TE) theory, the ideality factor (n) decreases but the zero bias barrier height (Phi(Bo)) increases while the temperature increases for both regions. The plots of n vs Phi(B0), q/2 kT vs Phi(Bo) and q/2 kT vs n(-1)-1 have two linear regions from 80 K to 160 K and 180 K-360 K. This indicates the Double Gaussian Distribution (DGD). Experimental Richardson constant (A*) was acquired as 8.73 A/cm(2)K(2) and 8.14 A/cm(2)K(2) for Region I and II which are quite close to theoretical A* value for n-GaAs. Consequently, the predominant CTMs at M/S interfaces can be clarified by DGD on the basis of TE.
The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD)
(Springer, 2020) Evcin, Baydilli, E.; Altindal, S.; Tecimer, H.; Kaymaz, A.; Uslu, Tecimer, H.
There are several methods used to obtain the basic diode parameters that affect the diode quality of Schottky diodes (SD) such as ideality factor (n), barrier height (?Bo), and series resistance (Rs). In this study, it is aimed to compare the results using Ohm’s law, Thermionic Emission theory (TE), Norde and Cheung-Cheung functions. The I–V measurement of the Au/7%Gr-doped PVA/n-GaAs type SD was taken in the range of 80–360 K in 20 K steps. Considering that each method is effective in the different voltage region of the I–V curve and the parameters are strongly voltage-dependent, the results are compatible with each other. Also, the interface states (Nss) were calculated with and without Rs for each temperature value, and it was attained that the effect of Rs reduced Nss values by almost 1 degree. This result reveals the importance of the Rs parameter for SDs. As a result, it is plainly represented that the basic diode parameters n, Rs and ?Bo values are strongly dependent on temperature and voltage, and affected by barrier inhomogeneity and surface states. © 2020, Springer Science+Business Media, LLC, part of Springer Nature.
Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities
(Springer, 2016) Tan, S. O.; Tecimer, H. Uslu; Cicek, O.; Tecimer, H.; Orak, I.; Altindal, S.
The Au/ZnO/n-GaAs Schottky barrier diode was fabricated and examined regarding to its current-voltage characteristics under distinct illumination intensities at room temperature. The reverse biased current increases with increasing illumination level while forward biased current is almost unchanged with illumination which states that the fabricated diodes exhibit photosensitive character or photodiode behavior. Hence, the shunt resistance is decreased with illumination while the series resistance is almost remained constant. The increment in the ideality factor after illumination can be ascribed to the assumption of inhomogeneities at M/S interface. Considering the ideality factor and the voltage dependent effective barrier height, the energy distribution profiles of surface states (Nss) were formed by the forward bias current-voltage data and increased with increasing illumination level. The Nss values acquired by considering series resistance are lower than those acquired by ignoring series resistance. Consequently, surface states can serve as recombination centers and have great importance especially in reverse bias current-voltage characteristics.
Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions
(Elsevier Sci Ltd, 2016) Cicek, O.; Tecimer, H. Uslu; Tan, S. O.; Tecimer, H.; Altindal, S.; Uslu, I.
Au/n-GaAs (MS) type Schottky diodes (SDs) were fabricated with and without pure and Gr-doped PVA interlayer to evaluate the effects of Gr-doped PVA interlayer on the basic electrical parameters (i.e. saturation current (I-o), ideality factor (n), barrier height (Phi(Bo)), series (R-s) and shunt resistances (R-sh) both under dark and illuminated conditions (50-200 W), at room temperature. Using different calculation methods (i.e. thermionic emission (TE) model, Ohm's Law and Norde's method), these parameters were obtained from the current -voltage (I -V) data and compared with each other in various conditions. In our research, it is clear that there are a decrease in R-s value and an increase in R-sh value for Gr-doped PVA in comparison with the pure PVA structure under dark and illuminated conditions, therefore rectifier rate (RR = I-F/I-R), is the proof of the quality for diodes, significantly improved. Also, the Phi(Bo) values with interlayer (pure and Gr-doped PVA) are lower than without. Consequently, these results indicate that the PVA (pure and Gr-doped) changed effectively the BH according to other structure and, moreover, Gr-doped PVA layer significantly improved the quality of Au/PVA/n-GaAs structure under dark and illuminated conditions. (C) 2016 Elsevier Ltd. All rights reserved.
Frequency dependent C-V and G/?-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes
(Springer, 2017) Tan, S. O.; Tecimer, H. Uslu; Cicek, O.; Tecimer, H.; Altindal, S.
Au/ZnO/n-GaAs Schottky barrier diodes (SBDs) have been examined by the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements. The frequency dependence characteristics of measurements were obtained under various illumination levels at room temperature. The C and G/omega relation was observed as the decrement in capacitance corresponds to an increment in conductance. The increment of negative capacitance (NC) values by high frequency at forward biases was ascribed to the series resistance, interface states and interfacial layer. Considering the illumination intensity, the NC values were observed to increase with the decreasing illumination while the G/omega values increase with the increasing illumination. This behavior was referred to the increments in the polarization and carriers in the SBDs. The adverse impacts of the voltage dependent resistivity were decreased with increasing illumination levels. Eventually, a strong interaction between the electrical properties of SBDs and the frequency, illumination and applied bias voltage was demonstrated by experimental results.
Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure
(Springer, 2019) Tascioglu, Ilke; Tan, S. O.; Altindal, S.
cadmium-zincoxide (CdZnO) interlayered metal-semiconductor structure was examined by capacitance and conductance versus voltage data in dark and under 250W illumination at 100kHz, 500kHz and 1MHz frequencies, respectively. The effectuality of the frequency, applied voltage, illumination, and series resistance on the electrical parameters was discussed in detail. The increase in the frequency led to the decrement in capacitance and conductance and the increment in the illumination generally led to the increment in capacitance and conductance. An abnormal behavior was detected in the accumulation region of the C-V plots at 500kHz and 1MHz due to the inductive phenomenon of device. The effect of illumination intensity reduces the R-i values in the inversion region while enhances them in the depletion and accumulation region for 1MHz. Additionally, the series resistance values decrease with increasing frequency due to the specific dispersion of localized interface states. As a consequence of the experimental results, a remarkable interaction was realized between the electrical parameters and the illumination, frequency and applied biases.
Illumination effect on admittance measurements of polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes in wide frequency and applied bias voltage range
(2011) Yeriskin, S.A.; Uslu, H.; Tunç, T.; Altindal, S.
In order to have a good interpretation of the illumination effect on the capacitance-voltage (C-V) and conductance-voltage (G/?-V) profiles, C-V and G/?-V characteristics of the polyvinyl alcohol (Co, Zn-Doped)/n-Si Schottky barrier diodes (SBDs) were investigated in the wide frequency and applied bias voltage ranges at room temperature. Experimental results show that the values of both C and G/? are strong functions of frequency and applied bias voltage in dark and under illumination (200 W) conditions. It is clear that the dispersion in C and G/? is considerably high in the depletion and accumulation regions due to illumination induced electron-hole pairs and series resistance (R s) effect, respectively. The values of C and G/? exponentially decrease with the increasing frequency and at high frequencies (f>100kHz) the values of C and G/? become almost independent of frequency both in dark under illumination. © 2011 American Institute of Physics.
Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes
(Springer, 2018) Tecimer, Habibe Uslu; Alper, M. A.; Tecimer, H.; Tan, S. O.; Altindal, S.
Schottky barrier diodes (SBDs) have been fabricated with pure and zinc (Zn) doped organic interfacial layer of polyvinyl alcohol (PVA) to form Au/PVA/n-GaAs and Au/PVA(Zn-doped)/n-GaAs structures. The electrical characterization of these SBDs have also been made using their current-voltage (I-V) characteristics data on both forward and reverse biases at room temperature. The main electrical parameters, such as ideality factor (n), barrier height (I broken vertical bar (Bo)), series resistance (R (s)) and the voltage dependence resistance (R (i)) have also been extracted from the I-V data to compare the Zn-doped and undoped polymer interfacial layer SBDs. The rectifying ratio values of Au/PVA/n-GaAs and Au/PVA(Zn-doped)/n-GaAs SBDs have been obtained as 10(5) and 10(7), respectively, at (+/- 2 V). Consequently, the comparison of the polymer interfacial layer SBDs indicates that the Zn-doped SBDs have given better results than the undoped SBDs when considering the main electrical parameters at room temperature.
Interpretation of barrier height inhomogeneities in Au/In2S3/SnO2/(In-Ga) structures at low temperatures
(Springer, 2017) Tecimer, H.; Altindal, S.; Aksu, S.; Atasoy, Y.; Bacaksiz, E.
The structure of Au/In2S3/SnO2/(In-Ga) have been examined by current-voltage (I-V) data between 125 and 300 K temperature levels at forward biases. The zero-bias barrier height (I broken vertical bar (Bo) ) and the ideality factor (n) obtained from the linear part of lnI-V characteristics were achieved as cogently dependent to temperature. The I broken vertical bar (Bo) values increase with the increment at temperature where as those of n decrease. The obtained positive temperature coefficient (alpha = 2.1 x 10(3) eV/K) of I broken vertical bar (Bo) was not compatible with the In2S3 band gap's negative temperature coefficient or the ideal diode's barrier height (BH) behavior. Hence, the plot of I broken vertical bar (Bo) vs. q/2kT have figured to attain an evidence of a Gaussian distribution (GD) of the barrier heights (BHs). The figure for I broken vertical bar (Bo) vs. q/2kT was used to obtain standard deviation (sigma (o) ) and mean values of BH as 0.88 eV and 0.116 V, respectively. In this way, we modified Richardson [ln(I (o) /T (2)) - q (2)sigma(o) (2)/2k (2) T (2)] vs. q/kT plot, and the values of and effective Richardson constant (A*) were extracted as 0.87 eV and 10.25 A/cm(2) K-2 from this plot, respectively. It was educed that the I-V data which depends on temperature subjected to the thermionic emission (TE) theory can be set out in full with single GD of the BHs.
Investigation of photovoltaic effect on electric and dielectric properties of Au/n-Si Schottky barrier diodes with nickel (Ni)-zinc (Zn) doped organic interface layer
(Springer, 2018) Tecimer, H.; Tunc, T.; Altindal, S.
Photovoltaic effects were tracked on both electric and dielectric properties of Au/(Ni, Zn)-doped polyvinyl alcohol/n-Si Schottky barrier diodes as function of illumination intensity by 50 W steps at 1 MHz and in the voltage interval of (- 4)-(+ 5) V. The measurements indicate that ac electrical conductivity (sigma (ac) ), dielectric constant's both real and imaginary parts (epsilon', epsilon aEuro(3)), loss tangent (tan delta) and electric modulus (M', MaEuro(3)) are highly relevant functions of illumination and voltage. The variations in depletion region can be ascribed to the charges at interface and its reordering and restructuring under illumination and electric field but then accumulation region variations can be ascribed to the interfacial layer and series resistance (R (s) ). The values of epsilon(EE1)-E-1 and tan delta show a step increase with the increasing voltage for each illumination intensity while the values of epsilon' show an anomalous peak (similar to 1.4 V). C-V plot shows an intersection behavior at about 2.2 V due to lack of enough free charges in low illumination. The values of sigma (ac) increase with increasing illumination and voltage due to the formation electron-hole pairs. The MaEuro(3) vs V have two peaks for each illumination intensity and peak value increases with increasing illumination intensity and its positions tend to shift towards low voltage region.
On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)
(Elsevier Sci Ltd, 2014) Tecimer, H.; Uslu, H.; Alahmed, Z. A.; Yakuphanoglu, F.; Altindal, S.
The admittance measurements which are including capacitance/conductance-voltage-frequency (C-V-f and G/omega-V-f) measurements of the Al/PTCDA/p-Si (MPS) type Schottky barrier diodes (SBDs) were investigated in the frequency and voltage range of 10 kHz-1 MHz and (-3 V) to (3 V) at room temperature. C and G/omega values were found as strong functions of frequency especially in depletion and accumulation regions due to the effect of interface states (N-ss) and series resistance (R-s), respectively. The main electrical parameters such as doping concentration atoms (N-A), diffusion potential (V-d), Fermi energy level (E-F) and barrier height (Phi(B)(C-V)) values were obtained from the reverse bias C-2 VS V plots for each frequency. The voltage dependent resistivity (R-i) profile was also obtained from the C-i and G(i) data and they exhibit an anomalous peak in the depletion region due to particular distribution of N-ss at polymer (PTCDA)/Si interface. In addition, the energy density distribution profile of N-ss and their relaxation time (tau) were obtained from the measured C-f and G/omega similar to f characteristics for various forward bias voltages and they were ranged from 3.06 x 10(12) eV(-1) cm(-2) to 3.29 x 10(12) eV(-1) cm(-2) and 6.20 mu s to 8.41 mu s, respectively, in the energy range of E-v-0.479 and E-v-0.501 eV, respectively. These results confirmed that the value of N-ss may be passivized by PTCDA interfacial layer and such low value of N-ss is very suitable for the fabrication MPS type SBDs in the electronic industry. (C) 2013 Elsevier Ltd. All rights reserved.
On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80-360 K
(Springer, 2020) Evcin Baydilli, E.; Kaymaz, A.; Uslu Tecimer, H.; Altindal, S.
Au/PVA/n-GaAs (MPS) type Schottky diodes (SDs) were fabricated and investigated in a temperature range of 80-360 K to explain their possible conduction mechanisms (CMs). Three distinct linear regions with different slopes were observed in ln(I)-Vplots. The first region (R1), is within the range of 0.22-0.60 V, the second region (R2), is within the range of 0.64-0.90 V, and the third region (R3), is within the range of 1.1-1.5 V. It was shown that both ideality factor (n) and zero-bias barrier height (phi(Bo)) are strong functions of temperature for all three regions. It was noticed thatnvalues decreased and phi(Bo)values increased with increasing temperature. In order to ascertain the possible CMs, phi(Bo) - n, - phi(Bo) - q/2kT, and (n(-1) - 1) - q/2kTplots were also examined. In each of these plots, two linear regions were obtained within each of the three regions. The region from 80-180 K is called the low-temperature range (LTR), and the region from 200-360 K is called the high-temperature range (HTR). It has been revealed that the reason for the deviation from the classical thermionic emission (TE) theory cannot be explained only by the existence of the interface layer, interface states (N-SS) or quantum mechanical tunneling mechanisms, which can be also explained by the double Gaussian distribution (DGD) due to barrier inhomogeneity. Finally, the experimental Richardson constants (A*) were calculated from the interception point of the modified Richardson curve in LTR and HTR for all three regions. It was calculated as 6.22 and 8.13 A/cm(2)K(2)for RI, 7.77 and 8.14 A/cm(2)K(2)at R2, and 7.07 and 8.13 A/cm(2)K(2)at R3 for low- and high-temperature ranges, respectively. It is clear that especially HTR results are quite close to the known theoreticalA* value of 8.16 A/cm(2)K(2)for n-GaAs.
Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures
(Elsevier, 2013) Cetinkaya, H. G.; Tecimer, H.; Uslu, H.; Altindal, S.
The charge conduction properties of the Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) were investigated using current-voltage-temperature (I-V-T) measurements in dark and under various illumination levels. For this purpose, the main diode parameters such as reverse-saturation current (I-o), zero-bias barrier height (Phi(Bo)), ideality factor (n), series resistance (R-s) and shunt resistance (R-sh) of diode were obtained as function of temperature and illumination level. Experimental results show that all of these electrical parameters are strong functions of illumination and temperature. The change in all electrical parameters becomes more important at low temperatures and illumination levels. While the n value decreases with increasing temperature and illumination level, Phi(Bo) value increases. The fill factor (FF = V-m center dot I-m/V-oc center dot I-sc) values were obtained as 0.34 at 80 K and 0.40 at 320 K under 50 Wand these values are near to a photodiode. Therefore, the fabricated diode can be used as a photodiode in optoelectronic applications. The forward bias I-V characteristics of the diode have also been explained by the space charge limited current (SCLC) model. (C) 2013 Elsevier B.V. All rights reserved.
Schottky diode properties of CuInSe2 films prepared by a two-step growth technique
(Elsevier Science Sa, 2012) Tecimer, H.; Aksu, S.; Uslu, H.; Atasoy, Y.; Bacaksiz, E.; Altindal, S.
CuInSe2 films were synthesized by a thermal evaporation method on both glass and Mo coated glass substrates. To obtain Al/CuInSe2/Mo Schottky diode, Al metal was evaporated on the upper surface of CuInSe2 as a front contact and electrical properties of the structure were analyzed. The structural and optical behaviors of the CuInSe2 thin films were also investigated. The X-ray diffraction studies showed that the chalcopyrite CuInSe2 was obtained with a preferential orientation in the (1 1 2) plane with lattice parameters a and c as 0.577 and 1.161 nm, respectively. Mo back contact layer had a preferential orientation in the (1 1 0) plane. Scanning electron microscopy equipped with energy dispersive spectroscopy revealed an irregular and rough surface morphology with Cu-rich protruding regions. Optical studies showed the existence of three different band gaps, which were determined as 1.06, 1.17 and 1.39 eV, respectively. From the Hall Effect measurements, we determined the carrier concentration of CuInSe2 films as 4.0 x 10(17) cm(-3). The electrical properties of the CuInSe2 films were further studied by fabricating Al/p-CuInSe2/Mo structures and obtaining their forward and reverse bias current-voltage characteristics in a wide temperature range of 100-300K, in steps of 25K. A thorough analysis of the forward bias current-voltage characteristics based on thermionic emission theory showed that the zero bias barrier height increases while series resistance and ideality factor decreases with an increase in temperature. After a barrier height inhomogeneity correction, the Richardson constant and mean barrier height were found to be 34.71 A/cm(2)K(2) and 0.72 eV, respectively. (C) 2012 Elsevier B.V. All rights reserved.
Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures
(Elsevier Sci Ltd, 2017) Cicek, O.; Tecimer, H. Uslu; Tan, S. O.; Tecimer, H.; Orak, I.; Altindal, S.
In the present study, Schottky diodes (SDs) were produced with and without interlayer to evaluate synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites on the electrical (i.e. ideality factor (n), saturation current (I-o), barrier height (Phi(Bo)), shunt (R-sh) and series (R-s) resistances) and photoconductivity (i.e. photocurrent (I-ph), responsivity (R), photoconductivity sensitivity (S-ph), photosensitivity) parameters of Au/n-GaAs devices. Electrical parameters of Au/n-GaAs (MS) type (D-1), Au/pure PVA/n-GaAs (MPS) type (D-2) and Au/Gr-doped PVA/n-GaAs (MPS) type (D-3) structures have been obtained to the current-voltage (I-V) measurements using thermionic emission (TE) theory, Cheung's method and modified Norde's methods and, moreover, compared each other. The resistance (R-i) for these SDs was additionally calculated from Ohm's law as function of voltage for each diode. Experimental research indicate that there is an increase in R-sh value and a decrease in R-s value and rectifier rate (RR = I-F/I-R) for Gr-doped PVA structure according to the pure PVA structure, when the values of R-s and R-sh are compared between each other. Also, the Phi(Bo) values for D-2 and D-3 type SDs is lower than that of D-1 type SDs. The value of R-s for Gr-PVA interlayer 286 times lower than without interlayer. Therefore, it can be said that the PVA (pure and Gr-doped) interfacial layer effectively modified the barrier height (BH) according to without interlayer. As photoconductivity properties for SDs, the I-ph values in the reverse bias increased with illumination intensities (50-200 W). On the other hand, it is clear that there are an increase for D-2 and D-3 and a decrease for D1 with increasing illumination intensities in the R and S-ph values. So, they are sensitive to illumination intensities and exhibit a photoconductivity effect. As a result, Gr-doped PVA interlayer substantially got better the quality and performance of Au/PVA/n-GaAs SDs. (C) 2017 Elsevier Ltd. All rights reserved.
Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs)
(Elsevier Science Sa, 2013) Tecimer, H.; Turut, A.; Uslu, H.; Altindal, S.; Uslu, I.
In order to obtain detailed information about the current-transport mechanisms (CTMs) in the Au/(Zn-doped) PVA/n-GaAs SBDs, the forward and reverse bias current-voltage (I-V) characteristics were investigated in the temperature range of 80-350 K by the steps of 30K. The ideality factor (n) decreases from 12.850 to 2.805, while the zero-bias barrier height (Phi(Bo)) increases from 0.145 eV to 0.606 eV with increasing temperature from 80K to 350 K. While the n decreases, Phi(Bo) increases with increasing temperature. Such positive temperature coefficient (alpha) of Phi(Bo) is not in agreement with the negative temperature coefficient of band gap GaAs or barrier height (BH) of ideal diode. On the other hand, the value of modified barrier height (=n Phi(Bo)) decreases almost linearly with the increasing temperature as Phi(B)(T)= (1.909-5.852 x 10(-4)T) eV. It is clear that this value of the BH is in good agreement with the negative temperature coefficient of band gap of GaAs (-5.4 x 10(-4) eV K-1). In addition, the semi-logarithmic In I-V plots at low bias voltages are almost parallel for each temperature. As a result of that, its inverse slope (E-0 = nkT/q = 87 meV) remained almost constant, indicating it is independent of temperature. Such behavior of BH can be explained by the field emission (FE) theory especially at low temperatures rather than thermionic emission (TE) and thermionic field emission (TFE) theories. Therefore, the non-ideal behavior of the forward-bias I-V characteristics in Au/(Zn-doped)-PVA/n-GaAs SBD was successfully explained in terms of the TE mechanism with a double GD of BHs. (C) 2013 Elsevier B.V. All rights reserved.

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